SiC MOSFET and IGBT in one package increase system efficiency

July 19, 2019 //By Christoph Hammerschmidt
SiC MOSFET and IGBT in one package increase system efficiency
Infineon's hybrid EasyPACK 2B optimizes the sweet spot losses of CoolSiC MOSFET and Trenchstop IGBT4 chipsets. The module thus achieves increased power density and switching frequencies of up to 48 kHz. It is therefore particularly suitable for the requirements of the new generation of 1500 V photovoltaic applications and energy storage devices.

Compared to conventional 3-level Neutral Point Clamped (NPC) topologies, the new Advanced NPC (ANPC) supports uniform loss distribution between power semiconductors in inverter designs. Infineon therefore uses the ANPC topology for a hybrid SiC and IGBT power module, the EasyPACK 2B of the 1200 V family.


The ANPC topology enables system efficiencies of more than 99 %. By using the hybrid Easy 2B power module in e.g. the DC/AC stage of a 1500 V solar string inverter, coils can be dimensioned smaller than in devices with lower switching frequency. It therefore weighs considerably less than corresponding inverters equipped with silicon components only. In addition, the losses with silicon carbide are lower than with silicon. For this reason, less heat has to be dissipated and the heat sinks can be made smaller. Overall, this enables smaller packages and cost savings at the system level. Compared to 5-level topologies, the 3-level design reduces the complexity of the inverter.

The standard Easy 2B power module package features industry-leading low leakage inductance. In addition, the CoolSiC MOSFET chip's integrated body diode provides a low-loss freewheeling function without an additional SiC diode chip. The integrated NTC temperature sensor also facilitates component monitoring, and PressFIT technology reduces assembly time.


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