RF GaN transistor targets electronic warfare applications

December 06, 2017 //By Jean-Pierre Joosting
RF GaN transistor targets electronic warfare applications
Wolfspeed (Durham, NC), a Cree Company, has showcased its new internally-matched CG2H30070 GaN HEMT device at the 54th Annual AOC International Symposium and Convention. The device is ideal for electronic warfare C-IED jamming applications requiring continuous output power over an instantaneous frequency band.

The CG2H30070 is designed to provide instantaneous continuous wave (CW) power output of 70 W, enabling battery operation for power amplifiers used by individual soldiers’ manpack radio systems.

GaN RF devices from Wolfspeed provide a key enabling technology for military systems designed to counter the threat from improvised explosive devices (IEDs) on the battlefield. This latest device is the first 28-V, high-power, pre-matched GaN HEMT optimized for every broadband operation that improves on the current 25- to 50-W power output capability for soldiers.

Wolfspeed has also developed an application circuit that combines two devices to achieve >100-W CW power over a frequency range of 700 to 3000 MHz with 48% efficiency to support higher capability systems.


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