Scientists at the Fraunhofer Institute for Applied Solid State Physics IAF (Freiburg, Germany) have succeeded for the first time worldwide in producing aluminium scandium nitride (AlScN) by metalorganic chemical vapor deposition (MOCVD). Components based on AlScN are regarded as the next but one generation of high-performance electronics. Fraunhofer IAF is thus taking a decisive step towards its goal of manufacturing power electronics for industrial applications based on transistors made of AlScN.
Transistors based on AlScN are considered promising for use in industrial applications such as data transmission, satellite communications, radar systems and autonomous driving. Silicon (Si) based devices are increasingly reaching their physical limits in these applications. This means that Si components can no longer become smaller. And if the ever-increasing amounts of data had to be processed with the current Si technology, the server rooms would occupy such a large area that it would be economically and ecologically unacceptable.