GaN transistors carry up to 150A

March 07, 2019 //By Christoph Hammerschmidt
GaN transistors carry up to 150A
GaN Systems (Ottawa, Canada), has introduced what it claims to be the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 V (GS-065-150-1-D) and the 80 A, 650 V (GS-065-080-1-D) to its line of GaN power transistors. In particular, the 150 A, 650 V transistor is unmatched on both current (80 A at 22 mΩ) and resistance (50 A at 18 mΩ) than any other GaN power transistor in the market.

With the introduction of an 150 A, 650 V and an 80 A, 650 V HEMT (High Electron Mobility Transistor) to its line of GaN power transistors, semiconductor company GaN Systems (Ottawa, Canada), is expanding its product line. Target applications include electric vehicles, energy storage and industrial motors.

The new GaN HEMTs achieve higher operating currents, higher efficiency, and smaller size and weight in comparison to available products. The transistors, developed specifically for automotive, industrial, and renewable energy industries, feature the highest current GaN in production, the vendor claims. Applications include:

  • Traction inverters (75 kW to 150 kW) and onboard chargers (6.6 kW to 22 kW range) in electric vehicles
  • Energy storage systems and solar/PV inverters up to 50 kW+
  • Industrial motor drives and controllers up to 10 kW+

The products are sold in a die form factor targeted for various power module topologies. Customers use the die in modules to create half-bridge, full-bridge, and six pack configurations to create optimized high-power designs with integrated gate drive circuits to differentiate their end customer solutions.

More information:

Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.