GaN-on-SiC HEMTs break efficiency record

September 17, 2017 //By Jean-Pierre Joosting
GaN-on-SiC HEMTs break efficiency record
Wolfspeed, a Cree Company, has introduced a series of 28V GaN HEMT RF power devices that are capable of higher frequency operation to 8 GHz with increased efficiency and higher gain as well as best-in-class reliability.

RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.

The latest 28V GaN HEMT devices are developed using Wolfspeed’s proven 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs. Available as both packaged devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN HEMTs deliver 33% higher frequency operation to 8 GHz (from 6 GHz), an additional 1.5- to 2.0-dB of gain, as well as a 5-10 percent boost in operating efficiency compared to Wolfspeed’s earlier generation devices.

“By moving to our proven 0.25µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” said Jim Milligan, RF and microwave director, Wolfspeed. “Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”

The higher efficiency (up to 70 percent at PSAT) and higher bandwidth capability makes these devices ideal for an extensive range of RF power amplifier applications, including those for military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band.

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