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GaN-based EV charger claims efficiency breakthrough

GaN-based EV charger claims efficiency breakthrough

By eeNews Europe



Prior to this achievement, Level-2 EV chargers reached maximum efficiencies of 94%, the researchers claim. Using GaN Systems’ 60-A, 650-V GS66516T switches in an innovative two-stage architecture, the Kettering University research team, led by Associate Professor of Electrical Engineering, Dr. Kevin Bai, were able to increase the wall-to-battery efficiency to more than 3% greater than previously obtained.

"The switching performance we observed with the GaN Systems’ parts was marvelous. Using these devices our power electronics exhibited a power density greater than 2.6 kW/l. This is a significant milestone with important implications for charging electric vehicles, among other charging applications," stated Dr. Bai, characterizing this new development as a ‘game changer’ for the EV charging industry.

GS66516T 650-V E-mode GaN transistor information page

GaN Systems: www.gansystems.com
HELLA KGaA Hueck & Co.: www.hella.com
Kettering University: www.kettering.edu

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