Memory technology company NEO Semiconductor has announced the release of its second-generation X-NAND architecture. X-NAND Gen2 builds upon the award-winning X-NAND technology unveiled in 2020.
New patent-pending technology developed by the company advances X-NAND architecture, allowing 3D NAND flash programming (i.e., data writes) to occur in parallel using fewer planes. As a result, says the company, X-NAND Gen2 delivers twenty times faster performance than conventional 3D NAND flash. The X-NAND architecture deploys as a design solution compatible with current manufacturing technologies and processes, providing impressive competitive advantages to semiconductor manufacturers.
X-NAND Gen-2, which doubles throughput over X-NAND Gen1, delivers SLC-like performance with larger capacity and lower cost QLC memory. X-NAND Gen2 incorporates zero-impact architectural and design changes that do not increase manufacturing costs while offering extraordinary throughput and latency improvements
“The launch of X-NAND Gen2 is a prime example of NEO executing on its market-disruptive approach,” says Andy Hsu, Founder and CEO of NEO Semiconductor. “Our goal is to give the industry a wide array of solutions that address the growing performance bottlenecks in IT systems and consumer products.”
The company says it designed and developed X-NAND, the world’s fastest 3D NAND flash memory architecture, in response to the inefficiencies of conventional 3D NAND flash, which lead to performance bottlenecks in business systems and consumer devices. X-NAND improves the performance of all generations of 3D NAND flash, including SLC, MLC, TLC, QLC, and PLC. By making non-disruptive architectural and design changes to 3D NAND flash, X-NAND significantly increases throughput and lowers latency.