Plessey starts transition to 8-inch GaN-on-Silicon production

Business news |
By eeNews Europe

The project aims to accelerate high volume manufacturing of Plessey’s innovative LEDs created with GaN-on-Silicon technology at the company’s Devon based manufacturing site.

"This project supports the work we have ongoing with AIXTRON and Bruker to further increase the yield of our GaN-on-Silicon process. These improvements are required as part of our move to 200 mm (8-inch) silicon substrates. A 200 mm (8-inch) wafer has almost twice the usable area of our existing 150 mm (6-inch) wafers and therefore will almost double the number of LEDs produced for the same relative cost," said Dr. Keith Strickland, Plessey CTO.

Plessey’s MaGIC (Manufactured on GaN-on-Silicon I/C) High Brightness LED (HBLED) technology has won numerous awards for its innovation and ability to cut the cost of LED lighting by using standard silicon manufacturing techniques.

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