GaN power ICs upgrade efficiencies, reliability

GaN power ICs upgrade efficiencies, reliability

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GaN power IC specialist Navitas Semiconductor has announced that its GaNFast power ICs with GaNSense technology have been upgraded to increase efficiency, power density, and access additional fast-charger markets.
By Rich Pell

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The ‘voltage rating’ of the company’s NV613x and NV615x GaNFast power ICs with GaNSense has been upgraded from 650V to 700V for continuous operation, and is rated at 800V for transient conditions. Increased voltage-rating enables more-efficient power transformer circuit designs, and higher capabilities for areas of the world with unreliable, widely-varying power grids with extreme voltage spikes.

The devices’ autonomous system-level monitoring and reaction ensures ‘detect and protect’ within 30 ns – 10x faster than for discrete implementations, says the company.

“GaNFast power ICs already deliver the highest reliability and highest performance in the mobile fast-charger market,” says Dan Kinzer, Navitas’ COO / CTO and co-founder. “Navitas’ engineering, quality and applications teams continue to deliver leading-edge, next-generation technology with a proven, data-driven approach that enables customers to innovate aggressively in power-conversion and fast-charger design – and to access expanded markets in more areas of our world.”

Updated datasheets and reliability reports are available immediately to customers and design partners under NDA.

Navitas Semiconductor

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