8-V N-Channel TrenchFET Power MOSFET offers on-resistance down to 9.4 mΩ at 4.5-V in the 2-mm by 2-mm footprint area
The new SiA436DJ offers an ultra-low on-resistance of 9.4 mΩ at 4.5 V, 10.5 mΩ at 2.5 V, 12.5 mΩ at 1.8 V, 18 mΩ at 1.5 V, and 36 mΩ at 1.2 V. These values are up to 18 % lower than previous generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2-mm by 2-mm footprint area.
The SiA436DJ will be used for load switching in portable electronics such as smart phones and tablet PCs, in addition to mobile computing applications. The device’s ultra-compact PowerPAK SC-70 package saves PCB space in these applications, while its low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency.
The MOSFET’s on-resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges. The SiA436DJ’s low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
The SiA436DJ is 100 % Rg tested, halogen-free in accordance with IEC 61249-2-21, and RoHS-compliant.
Samples and production quantities of the new SiA436DJ TrenchFET power MOSFET are available now, with lead times of 12 weeks for larger orders.
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