Active-clamp MOSFETs feature low on resistance, AEC-Q101

June 13, 2018 // By Christoph Hammerschmidt
Toshiba Electronics Europe has launched a new MOSFET series that incorporates an active-clamp structure with a built-in diode between the drain and gate terminals. With the requirement for a minimum of external components the single SSM3K357R and the dual SSM6N357R are suited to drive inductive loads, such as relays or solenoids in industrial or automotive environments.

The new 357 series protects drivers against possible damage from voltage surges, as caused by back EMF from the inductive load. It integrates a pull-down resistor, series resistor and Zener diode, all of which helps reduce the external part count and save PCB space.

The devices withstands a maximum drain-source voltage (V DSS) of 60V and a maximum drain current (I D) of 0.65A. The low drain-source on-resistance (R DS(ON)) of 800mΩ at V GS=5.0V ensures efficient operation with minimal heat generation.

The single SSM3K357R is housed in a 2.9 x 2.4 x 0.8mm SOT-23F class package, and suitable for relay and solenoid control due to the low operating voltage of 3.0V. As the device is qualified according to AEC-Q101 it is suited for automotive as well as many industrial applications.

The dual SSM6N357R is housed in a 2.9mm x 2.8mm x 0.8mm TSOP6F class package, which enables usage of two devices on a board requiring 42% less mounting area than using two of the single devices.

More information: http://toshiba.semicon-storage.com/de/top.html


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